| 摘要 |
PURPOSE:To set an action delay which an FET itself has to a dead time and to improve control precision and responsibility by generating a turn-on-signal with making that the inverse bias detection element of a transistor in one arm which is serial to the other arm to non-action as a prohibition condition. CONSTITUTION:The detection elements X11, X12, X21 and X22 which operate when respective transistors 3 and 4 are inversely biased are provided, and the turn-on-signal is generated with the non-action of the detection elements X11, X12, X21 and X22 of the transistor 4 or 3 in one arm to which a gate circuit 20A or 20B that generates the turn-on/turn-off signal of the transistor 3 or 4 in the other arm is connected in serial to the other arm as the prohibition condition. Since the gate circuit 20A or 20B of the transistor 3 or 4 in one arm does not generate the turn-on signal until the inverse bias is secured between the gate sources of the transistor 3 or 4 in the other transistor, the positive and negative arms are prevented from being shortened. Furthermore, the dead time can automatically be secured by the characteristics of the transistors 3 and 4, whereby it can be shortened to the shortest possible time on circuit constitution. |
