| 摘要 |
<p>PURPOSE:To prevent a drain and a source electrode from being broken and to improve throughput by forming two insulating layers of a gate insulating film and a signal charge storage capacitor. CONSTITUTION:Two layers of an SOG film 26 and an insulating film 27 are arranged between a gate electrode 23 and a semiconductor film 29 and the source electrode 31 and drain electrode 32 are arranged on the semiconductor film 29 to form the thin film transistor (TFT) 20. Further, an SOG film 26 and an insulating film 27 are arranged between two electrode ITO 25 and trans parent conductive film 30 to form an image signal storage capacitor. Consequent ly, the throughput is improved and a drain line is never broken at the intersec tion of the TFT 20 of a drain line and the gate line.</p> |
