SEMICONDUCTOR CRYSTAL

摘要

PURPOSE:To obtain a desired doping concn. with good reproducibility by subjecting a ZnSe single crystal which is produced by a method known as a recrystallization traveling heater method (RTHM) together with Zn and n type impurity or Se and p type impurity to a heat treatment under specific conditions in a reaction vessel. CONSTITUTION:ZnSe 1 produced by a CVD method or sintering method is worked to a bar shape and is put into a reaction tube 2 where an atmosphere 4 of an inert gas, gaseous nitrogen or H2Se or n gaseous mixture composed thereof under 0.1--100Torr is maintained and the ZnSe polycrystal 1 is heat-treated 5 at 0.05-5mm/ day speed in the specific temp. distribution A-B-C-D-E-F by maintaining the solid phase and is thereby made into the ZnSe single crystal. This single crystal is cut out to a chip or wafer shape 6 and is put into a reaction vessel 7. The Zn and the n type impurity or the n type impurity and the compd. of the Zn are added to the reaction vessel in the case of doping the n type impurity and the Se and the p type impurity or the p type impurity and the compd. of the Se are added thereto in the case of doping the p type impurity. The temp. of 400-900 deg.C is maintained (by a heater 8) under 1-100-Torr pressure in the vessel and the single crystal is heattreated for >=20 hours.