SEMICONDUCTOR LASER

摘要

Semiconductor laser comprises; a substrate of first type; a current blocking layer of second type; a cladding layer of first type; an active layer of second type; and a cladding layer of second type. The current blocking layer has a stepped channel formed of an optical guiding channel and a current restricting channel which is grooved at the bottom of the optical guiding channel through the current blockin layer into the substrate cladding layer burying the stepped channel.