| 摘要 |
PURPOSE:To reduce the number of layers of a conductive film to be provided on a semiconductor substrate so as to simplify a construction of a memory cell by forming en bloc an electrode of a groove type capacity element and a word line on a groove provided with the electrode. CONSTITUTION:A memory cell (for instance M5) consisting of a transfer MISFET (for instance Q5) connected to a prescribed word line (for instance 203) on a semiconductor substrate 1 and a groove type capacity element (for instance C5) connected to the transfer MISFET (Q5) are provided. Then, in a semiconductor memory device wherein an electrode in a groove 304 of a groove type capacity element C5 is provided under a neighboring work line (for instance 204) to the prescribed word line (for instance 203), an electrode of the groove type capacity element C5 is formed en bloc with a word line on a groove provided with an electrode. Thereby, the number of conductive films to be provided on a semiconductor substrate 1 of a dynamic RAM of large capacity can be reduced. Further, when the word line and an electrode of the capacity element are formed on different layers, an interlayer insulating film to be necessary for insulating their interval can be removed. |
