| 发明名称 |
SEMICONDUCTOR DEVICE COMPRISING DIELECTRIC ISOLATION REGIONS |
| 摘要 |
Devices formed in a semiconductor integrated circuit device are electrically isolated by a pair of narrow and deep grooves (9), thick oxide films (14) formed on the surfaces of the grooves and a thick oxide film (15) formed on a surface of an area between the grooves. |
| 申请公布号 |
DE3380378(D1) |
申请公布日期 |
1989.09.14 |
| 申请号 |
DE19833380378 |
申请日期 |
1983.09.26 |
| 申请人 |
HITACHI, LTD. |
发明人 |
TAMAKI, YOICHI;SHIBA, TAKEO;SAGARA, KAZUHIKO;KAWAMURA, MASAO |
| 分类号 |
H01L21/302;H01L21/3065;H01L21/331;H01L21/76;H01L21/762;H01L21/763;H01L29/73;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/302 |
| 代理机构 |
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代理人 |
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