| 摘要 |
<p>The structure of a solid-state image pickup device constructed to effectively prevent the occurrence of dark current is provided. This solid-state image pickup device includes a photosensitive pixel section (2) formed at the surface portion of a semiconductor layer of one conductivity type and each pixel consisting of an impurity layer of an opposite conductivity sensitive to light to generate signal carriers; an element isolation layer (4) formed adjacent to each photosensitive pixel to allow the photosensitive pixels to be isolated from each other; transfer electrodes (3) for transferring the signal carriers; and a storage electrode (9) formed at the upper portion of each photosensitive pixel and responsive to the application of a voltage to allow carriers of opposite polarity to that of the signal carriers, to be injected from the element isolation layer into the surface portion of each photosensitive pixel, thus reducing the dark current at the surface portion of each photosensitive pixel, wherein the storage electrode is provided with an opening (9a) at a portion corresponding to an optical path to which the light is incident.</p> |
