| 摘要 |
PURPOSE:To enable the relative positions of an underneath pattern and an alignment pattern to be checked easily even if the underneath pattern becomes unsharp by forming the underneath pattern and the alignment pattern respectively into true circles. CONSTITUTION:An underneath alignment pattern is formed into a true circle 1 in large diameter while a pattern of photo-resistor to be aligned with the underneath pattern is formed into another true circle 2 in small diameter. When said two patterns are aligned with each other, if the centers thereof are coincided with each other, they are in accurately aligned state while if the centers thereof are slipped off, said two patterns are mis-aligned with the slipped amount thereof equivalent to that of the centers thereof. Besides, if the pattern 2 is slipped out of the center of the pattern 1, the slipped amount of said two patterns is large. Consequently, even if the underneath alignment pattern 1 becomes unsharp like an epitaxial layer, the center thereof can be easily supposed since the pattern 1 is formed into a true circle. Through these procedures, the alignment state with the pattern 2 of photo-resist can be easily checked. |
