Process for surface passivation of an indium phosphide substrate and product obtained

摘要

PCT No. PCT/FR87/00093 Sec. 371 Date Dec. 28, 1987 Sec. 102(e) Date Dec. 28, 1987 PCT Filed Mar. 25, 1987 PCT Pub. No. WO87/06058 PCT Pub. Date Oct. 8, 1987.Surface passivation of indium phosphide substrate. The process consists in: subjecting the substrate to cleaning without application of ultrasounds, soaking, for a duration of between 30 seconds and 10 minutes, the substrate in an aqueous solution of complex arsenic ions maintained at a temperature of between 0 DEG and 50 DEG C., abundantly rinsing the substrate in deionized water.