| 摘要 |
PURPOSE:To obtain a semiconductor device which has less reverse leakage current and good DC current amplification factor in a semiconductor element in which a P-N junction edge, and P and N type domains are exposed on the surface by alternately laminating electrode layers for the P type and N type domains through an insulating layer at the edge of the junction. CONSTITUTION:An N<-> type collector layer 13 and a P<+> type base layer 9 are laminated, a P-N junction 14 is formed in the boundary, an N<+> type emitter domains 8 is diffused in the layer 9, a P-N junction 10 is formed in the boundary between the bottom and the layer 9, and a P-N junction 11 which is exposed to the surface is formed on the side. The exposed end of the junction 11 is covered with an Si3N4 film 12, and a base electrode layer 18 is formed on one film 12. Thereafter, when an emitter electrode layer 15 is covered on the domains 8, one end of the layer 15 is made to ride on the other film 12, and the other end is made to ride on an insulating layer 12 formed on an electrode layer 19. In this manner, since the exposed surface of the junction 11 is covered with the electrode layers 15, 18 through the film 12, Na<+> ion invasion can be reduced. |
