| 摘要 |
PURPOSE:To increase the crystallization temp. so as to stabilize the amorphous state at room temp. and to obtain the recording medium having a large reflectivity change with a phase transition by adding Te of a chalcogenite element to a binary alloy of Ag, La, thereby forming the recording layer. CONSTITUTION:Sputtering sources 18, 19, 20 of the Ag, La, Te are provided in a vacuum vessel and further monitors 21, 22, 23 are provided. The inside of the vessel 1 is then evacuated to a vacuum and gaseous Ar is introduced therein. The entire part of the pressure therein is controlled. A substrate 16 is rotated and the electric power to be thrown to the sputtering sources 18-20 is controlled while the sputtering rates of the respective elements are monitored by the monitors 21-23 to deposit the respective elements on the substrate 16, by which the recording layer is formed. The recording medium having the large reflectivity change with the phase transition is obtd. by adding the chalcogenite elements Te, Se, Ge to the binary element of the Ag and La which reversibly induce the phase transitions of the crystal and amorphous states. |
