| 摘要 |
With the method, a layer of a superconductor material with a high transition temperature on the basis of a material system containing metallic components and oxygen is to be prepared. To this end, a layer of metal-oxide preliminary product of the components of the system with a structure still having faults with respect to the superconducting metal oxide phase is first applied to a predetermined substrate with an ordered structure and the desired superconducting metal oxide phase is epitaxially formed subsequently, using a heat treatment and while oxygen is being supplied. It should be possible to carry out the heat treatment such that application in semiconductor technology is possible. For the development of the desired superconducting metal oxide phase, thermal pulses of short duration, for instance, of an optical radiation source, are provided where at least at the beginning of this process step, the boundary surface between the preliminary product and the substrate is heated such that a temperature gradient of at least 10 DEG K. per mu m measured over the thickness of the layer is obtained. |
