| 摘要 |
<p>A semiconductor memory device such as a static random access memory can attain high speed read-out of data therefrom without increasing the number of production process steps. The memory device includes load element MOS transistors (46, 46) for precharging bit lines (BL1, BL2), and access MOS transistors (42, 43) selectively controllable by a word line (WL) and connected to a memory cell (41). MOS transistors (47, 48) serve as variable load means, and a further MOS transistor (44) is provided to short-circuit and thus equalise the bit lines (BL1, BL2). The semiconductor memory can further attain a flash-clearing function without increasing the chip size.</p> |
