| 摘要 |
PURPOSE:To minimize an effect oil the deterioration of the performance of a semiconductor element of various crystal defects existing in high density in a crystal layer, and to improve the performance and reliability of the element, by using the crystal layer, in which micro spinodal decomposition is generated, as a hetero-epitaxial growth layer formed onto a substrate of a different kind. CONSTITUTION:An N-type GaAs layer 2 is formed on a face (100) N-type silicon substrate 1 through a normal-pressure MOVPE method, the surface of the silicon substrate 1 is thermally treated in a hydrogen atmosphere and cleaned, and an amorphous layer in approximately 100Angstrom is formed at a temperature of approximately 450 deg.C. An N-type InGaP layer 3 approximately lattice-matching with GaAs and a P-type InGaP layer 4 are grown onto the GaAs layer through a hydride VPE method. A crystal layer in the InGaP layer generates micro spinodal decomposition, and dislocation in a crystal is difficult to be moved. Accordingly, an ohmic electrode 5 composed of an Au-Zn-Ni alloy, etc., is shaped onto the surface of P-type InGaP acquired, and a mesa type light-emitting diode including the electrode 5 is formed. |
