| 摘要 |
A bidirectional semiconductor switch is produced in a semiconductor layer (2) (e.g. silicon) arranged on an insulating base (1) of e.g. sapphire. The switch has two highly doped main contact regions (3a, 3b). Between these regions the switch has a voltage absorbing part comprising a weakly doped layer (5), located next to the surface of the semiconductor layer, of the same conductivity type as the main contact regions, and a weakly doped layer (4), located next to the base, of the opposite conductivity type. Between each one of the contact regions (3a, 3b) and the weakly doped layer (5) located near the surface, normally non-conducting MOS structures (6a, 8a, 6b, 8b) are arranged. By simultaneously controlling the two MOS structures to conducting state, the switch becomes conducting and is able to carry current in an optional direction between the main contacts. |
