| 摘要 |
PURPOSE:To reduce the thermal deformation of a polishing plate caused by polishing heat by forming the polishing plate with a graphite base body. CONSTITUTION:A semiconductor-wafer polishing plate 1 is composed of a graphite base body 2 having through holes 3 through a plate thickness direction on a spot facing face. The outer surface of the base body 2 and the inner peripheral faces of the through holes 3 are coated with SiC or Si3N4 by means of a CVD method. Due to the cooling effect by these through holes 3 and the favorable heat conducting property of the graphite itself, the thermal deformation of the polishing plate 1 caused by polishing heat can be reduced. Further, due to the coating of the SiC or Si3N4, the abrasion resistance, mechanical strength, corrosion resistance, heat resistance, etc. of the polishing plate 1 can be improved. |
