ELEKTROLUMINISCENT DIOD MED ETT SMALT SPEKTRALOMRAADE OCH FOERFARANDE FOER DESS FRAMSTAELLNING

摘要

A semiconductor device includes an electroluminescent diode, which is obtained from at least one epitaxial layer of a III-V compound vapor-deposited on a substrate which is also of a III-V compound. The invention is characterized in that, preferably before the epitaxial layer is vapor deposited, a layer having a disturbed crystal structure is provided at the surface of the substrate, as a result of which the substrate does not generate radiation.