| 摘要 |
PURPOSE:To reduce the unfavorable intake of any gasses in atmosphere or different kinds of gasses in the preceding process into backward film deposition chambers by a method wherein, after finishing the film deposition process in the forward film deposition chamber, a mask only is shifted to the backward film deposition chamber while preventing any different gasses film mixing in the backward chamber. CONSTITUTION:A plurality of film deposition chambers containing different kinds of gasses in the material gas respectively led into the chambers are arranged in the shifting direction (a) of substrates holding the films to be deposited while sealing means 14a-14d airtightly sealing the shifting of the different kinds of gasses are provided between the film deposition chambers 10p, 10i, 10n to film difference kinds of films in respective film deposition chambers. Then, after finishing a film deposition process of a film in a forward film deposition chamber e.g., the film deposition chamber 10p in the shifting direction of the substrate, the sealing means 14a is opened to shift only the filmed substrate to the backward film deposition chamber e.g., the film deposition chamber 10i while preventing any different kinds of gasses from mixing in the chamber 10i and then the sealing means 14a is closed to laminate any different kind of film on the substrate in the backward film deposition chamber 10i. Through these procedures, the mixing of any impurities in the film deposition chamber can be further reduced. |
