| 摘要 |
PURPOSE:To use a semiconductor integrated circuit even in a power source system to have >=10V potential difference by equipping a circuit, which is composed of a PMOS transistor and a bipolar transistor, between the power source lines of second and third potentials. CONSTITUTION:A PMOS105 supplies the base current of an NPN transistor 103 and drives the NPN transistor 103. A PMOS106 supplied the base current of an NPN transistor 104 and drives the NPN transistor 104. Since an input step is composed of an MOS, an input impedance is high. Since an output step is composed of the bipolar transistor, an output impedance is small and driving force is high. Since this circuit is composed of the PMOS and NPN transistors, even when a substrate potential is caused to be -5.2V, a problem on pressure resistance is not generated. Thus, the high pressure resistance can be obtained. |
