| 摘要 |
PURPOSE:To prevent short channel effect, by forming the low concentration region on the channel region side of a drain, by using impurity whose diffusion coefficient is small as compared with phosphorus. CONSTITUTION:A P-type semiconductor region 51 is formed from the main surface of a semiconductor substrate 1 toward the inside, and gate electrodes 10 are formed on the main surface, putting a gate insulating film 9 therebetween. Arsenide ion is introduced by using the electrodes 10 as a mask, and a first semiconductor region 11 of N-type is formed in the P-type semiconductor region 51. Side walls 13 are arranged on both side walls of the gate electrode 10. Arsenide ion is introduced by arranging side walls 13 on both side walls of the gate electrodes 10 and using the gate electrodes 10 and the side wall 13 as masks. Electric connection with the first semiconductor region 11 is complet ed, and a second semiconductor region 12 of high impurity concentration is formed. The low concentration region 11 of a source.drain region is formed, in the above manner, by using arsenide whose diffusion coefficient is small, thereby reducing the oozing into the channel region, and preventing short chan nel effect. |
