| 摘要 |
PURPOSE:To curtail the life time at bulk central part, and to prevent the erroneous operation of a semiconductor device by a method wherein after an element is formed on a silicon substrate having no crystal defect in the surface layer, and having crystal defects of a large number at the bulk central part, a heavy metal is diffused from the back of the substrate. CONSTITUTION:After an element is formed on a silicon substrate having no crystal defect in the surface layer, and having the crystal defects of a large number at the bulk central part, the heavy metal is diffused from the back of the substrate. When P-N junction is formed on the silicon substrate thereof, and the V-IR characteristic thereof is examined, the IR is increased to about 300 times at the voltage 10V as compared with the case when diffusion is not performed, and life time of minority carriers is reduced to about one three hundredths. |
