| 摘要 |
A semiconductor device comprises a first barrier layer (3), a quantum well layer (4) formed on the first barrier layer and having a bottom of conduction band with an energy which varies with a curve of second order, a second barrier layer (3) formed on said quantum well layer, and first and second contact layers (7, 6). The first barrier layer, the quantum well layer and the second barrier layer make up a layer sequence which is repeated a predetermined number of times, and the first contact layer connects to the first barrier layer in a first of the predetermined number of layer sequences, while the second contact layer connects to the second barrier layer in a last of the predetermined number of layer sequences. |
