MATERIALS AND METHODS FOR PLASMA ETCHING OF OXIDES AND NITRIDES OF SILICON

摘要

A method for etching a layer of inorganic insulating material formed on a semiconductor wafer and containing silicon as the principal metallic element. The method involves disposing a wafer on one of a pair of electrode structures in a closed chamber. A reactive gas mixture comprising principally a fluorocarbon gas doped with a preselected quantity of carbon dioxide is supplied to the chamber. Radio frequency electrical energy is supplied to one of the electrode structures to create a plasma of the reactive gas mixture for chemically attacking the insulating material.