| 摘要 |
PURPOSE:To enable an InP single crystal thin film with its surface being flat and with improved crystallizability to be formed on the buffer layer by forming a GaAs buffer layer with its grid constant being between InP and Si on an Si substrate and by providing an InP buffer layer on it to form a two-layer buffer layer. CONSTITUTION:An amorphous-shaped GaAs buffer layer 2 with improved surface flatness is formed on an Si substrate 1. Namely, heating treatment is performed within a mixture gas of arsine gas and hydrogen at 900 deg.C or more, film is formed at a low temperature which is 450 deg.C or less with arsine gas and trimethyl gallium as a material, and a GaAs buffer layer 2 is formed. Then, an amorphous-shaped InP buffer layer 3 with improved surface flatness is piled and is allowed to grow on an amorphous-shaped GaAs buffer layer 2 with improved surface flatness thus allowed to grow. Furthermore, an InP single crystal thin film 4 is allowed to grow on this InP buffer layer 3 to a specified thickness at 600-650 deg.C. It allows an Inp semiconductor thin film with further improved crystallizability of InP semiconductor thin film to be obtained. |
