| 摘要 |
<p>PURPOSE:To prevent the inverse direction breakdown of a solar battery cell, by positively making a current flow in the inverse direction, when an inverse voltage is applied to the solar battery cell, by making a first semiconductor region and a second semiconductor region short-circuited, and making a third semiconductor region and a fourth semiconductor short circuited, too. CONSTITUTION:When the photo detecting surface of a solar battery cell is irradiated with light, photoelectromotive force generates between a P-type GaAs layer 104 and an N-type GaAs layer 102, and operates as a battery in which a cathode 301 is negative and an anode 302 or an anode 303 is positive. A P-type GaAs region 101 and an N-type GaAs region 102 are shorted, and does not contribute to photovoltaic power generation. In solar battery cell modules connected in series via external connection electrodes 301, 302 or external connection electrodes 301, 303, an inverse voltage is applied, when a part of the solar battery cells is darken. At this time, the P-N junction formed by the P-type GaAs region 101 and the N-type GaAs region 103 is biased in forward direction, and a current flows from the cathode 301 to the anode 302 or 303. Therefore, inverse voltage is not applied to the P-N junction having original function of electric power generation as a solar battery cell.</p> |
