发明名称 |
Method of forming a quantum dot structure. |
摘要 |
<p>A method of forming a quantum dot structure on a substrate (10) and devices incorporating such quantum dot structures are described. A suspension (11) of particles (12) of a semiconductor material for forming a quantum dot structure is formed, for example as a colloid by using the so-called arrested precipitation technique, and laser electromagnetic radiation (L) of a wavelength which interacts resonantly with particles (12a) of a given size is directed through the suspension (11) towards the substrate (10) so causing particles (12a) of the given size within the suspension (11) to be deposited onto the substrate (10).</p> |
申请公布号 |
EP0328202(A2) |
申请公布日期 |
1989.08.16 |
申请号 |
EP19890200251 |
申请日期 |
1989.02.06 |
申请人 |
PHILIPS ELECTRONIC AND ASSOCIATED INDUSTRIES LIMITED;N.V. PHILIPS' GLOEILAMPENFABRIEKEN |
发明人 |
DOBSON, PETER JAMES PHILIPS ELECTRONICS |
分类号 |
H01L21/203;C30B5/00;C30B7/00;C30B23/08;G02F1/017;G02F1/35;H01L21/10;H01L21/20;H01L21/208;H01L21/368 |
主分类号 |
H01L21/203 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|