A vertical isolated-collector transistor of the PNP type incorporating a device for suppressing the effects of parasitic junction components.

摘要

A vertical, isolated-collector transistor (1) of the pnp type comprises an island (16) doped similarly to the collector region (10) and formed in the surface epitaxial layer (7) of the transistor between that collector region (10) and one of the isolation zones (19). That island (16) extends in depth to penetrate a similarly doped intermediate region (4) and short out the epitaxial layer (7) included between the isolating layer (19) and the collector region (10) so as to suppress the effects of active parasitic junction components by holding a transistor and a silicon-controlled rectifier of parasitic types, as nesting within the structure of the vertical pnp transistor, in a cut-off state.