发明名称 Lateral metal-oxide-semiconductor controlled triacs
摘要 Lateral MOS controlled gate turn-off triacs with large OFF-Gate-width to emitter-width ratios. In one embodiment an ON channel is provided at one main electrode and an OFF channel is provided at the other. In another embodiment two channels in a series are provided at each main electrode. Current turn-off capacity is increased by serpentine or comb shaped channel regions or by trenches which provide channels along their walls.
申请公布号 US4857977(A) 申请公布日期 1989.08.15
申请号 US19870088353 申请日期 1987.08.24
申请人 GENERAL ELECTRIC COMAPNY 发明人 TEMPLE, VICTOR A. K.
分类号 H01L29/747 主分类号 H01L29/747
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