| 摘要 |
PURPOSE:To reduce high-frequency serial resistance while improving pressure- tightness in the reverse direction by combining a conductive semiconductor doped with donors in high concentration and a semiinsulating semiconductor and forming an ohmic electrode on the side of a conductive semiconductor and a Schottky electrode on a semiinsulating semiconductor. CONSTITUTION:A semiinsulating Al GaAs layer 2 is formed between an n-type GaAs layer 1 and a Schottky electrode so that pressure-tightness in the reverse direction of the Schottky electrode 3 is increased. Accordingly, n-type GaAs can be made low-resisting by doping with a large amount of impurities so that high-frequency serial resistance is reduced. |
