| 摘要 |
PURPOSE:To enable a transistor to be equipped with an adequate capacitor capacity and to allow an open bit line system and a folded bit line system to be constituted to occupy a relatively small area by a method wherein memory cells connected to neighboring bit lines are designed to use a common transfer gate. CONSTITUTION:In a separated-and-merged type semiconductor storage device wherein one transistor cell Mb is provided with one bit line contact window 10b and one capacitor region 5 is provided on the outer circumference of a field island 15, a pair of transistor cells Mb and Md respectively connected to neighboring bit lines are connected to one work line 11 neighboring with each other through a transfer gate 13, and their respective bit line contact windows 10b and 10d in a plan view are provided in a zigzag through the intermediary of the word line 11. Further, a capacitor region 5a for the transistor cell Mb, out of the pair of transistor cells Mb and Md is allowed to extend as far as the side of a field island 15 of the other transistor cell Md through the intermediary of a insulating film 8. |
