FORMATION OF MESFET GATE ELECTRODE,申请号JP19880024261-传众专利搜索

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发明名称	FORMATION OF MESFET GATE ELECTRODE
摘要
申请公布号	JPH01199472(A)	申请公布日期	1989.08.10
申请号	JP19880024261	申请日期	1988.02.04
申请人	SANYO ELECTRIC CO LTD	发明人	TABUCHI KAZUO
分类号	H01L29/417;H01L21/338;H01L29/80;H01L29/812	主分类号	H01L29/417
代理机构		代理人
主权项
地址

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