| 摘要 |
Method of making single-crystal mercury cadmium telluride layers by epitaxial growth on a cadmium telluride substrate (CS), performed inside a reactor (TQ) with two communicating zones, kept at different and controlled temperatures. Growth solution is directly prepared inside the reactor by submitting to a specific thermal cycle a weighted tellurium quantity, a saturating cadmium telluride substrate (SS) and a mercury bath (BM). |
