发明名称 Bicmos voltage reference generator.
摘要 <p>A BiCMOS voltage reference generator circuit generates and maintains a reference voltage within 3 mV over an 80 DEG C temperature range and over a 1 volt change in power supply level. The circuit uses feedback from the output of the reference voltage generator to the current source supplying current to the voltage reference generator. This feedback increases the effective output impedance of the current source, making the reference voltage output substantially independent of power supply variations. The circuit operates with power supply differential as low as about 3 volts, and preferably is fabricated from bipolar transistors and MOS transistors on the same chip.</p>
申请公布号 EP0326955(A1) 申请公布日期 1989.08.09
申请号 EP19890101405 申请日期 1989.01.27
申请人 NATIONAL SEMICONDUCTOR CORPORATION 发明人 KERTIS, ROBERT A.;SMITH, DOUGLAS D.
分类号 G05F3/24;G05F3/30;H03F1/30 主分类号 G05F3/24
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