发明名称 Electron beam apparatus
摘要 In an electron beam apparatus in which an electron beam is irradiated on a specimen, secondary electrons are generated from the specimen under the bombardment of the electron beam, and voltage is applied to and a signal voltage is picked up from the specimen through a probe, a metal electrode is disposed on at least part of the outer peripheral surface of the probe through an insulator and the metal electrode is maintained at predetermined electrical potential. The secondary electrons can be shielded from a horizontal electric field generated from the probe and can be detected accurately by means of a detector.
申请公布号 US4855673(A) 申请公布日期 1989.08.08
申请号 US19880156458 申请日期 1988.02.16
申请人 HITACHI, LTD. 发明人 TODOKORO, HIDEO
分类号 H01J37/28;G01R1/067;G01R31/305;H05K13/08 主分类号 H01J37/28
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