| 摘要 |
PURPOSE:To obtain the title resist material having high sensitivity, high resolution, and high resistance to oxygen dry etching by adopting a specified polymer contg. a pyrimidine dimer and a siloxane bond in a molecular chain as a positive resist material. CONSTITUTION:A polymer expressed by formula I, contg. a pyrimidine dimer and a siloxane bond in a molecular chain is adopted as a positive resist material having high sensitivity for high energy beams. In formula I, each R<1> and R<2> is H atom., methyl group, halogen atom., or cyano group; each R<3> and R<4> is a methyl or a phenyl group; (l) is an integer 2-6; m is an integer 1-4; (n) is a positive integer. The mol.wt. of this positive resist material decreases due to cleavage at the pyrimidine dimer part by the irradiation with high energy beams such as far ultraviolet rays having <=260nm wavelength or electron rays, etc., and functions as a positive resist by being solubilized in a solvent. Thus, a resist material having high sensitivity, high resolution, and high resistance to oxygen dry etching, is obtd. |
