| 摘要 |
<p>PURPOSE:To miniaturize and integrate an integrated circuit device by forming grooves by etching on a semiconductor substrate, forming a semiconductor layer on it by vapor phase epitaxy, and forming stepwise differences as a pattern set with scaled coordinate axes corresponding to the grooves on the surface. CONSTITUTION:Grooves 12 are deeply formed by etching on a semiconductor substrate 11. Thus, even if a semiconductor layer 13 is epitaxially grown on the substrate 11, stepwise differences 14 corresponding to the grooves 12 on the layer 13 are not reduced, but a vernier pattern becomes a clear shape. Accordingly, an accurate mask displacement can be read in a later photolithography step, and a sufficient alignment correcting work can be performed. Thus, a superposing margin in a design rule of an integrated circuit device can employ the capacity value of an exposure unit itself, thereby miniaturizing and integrating the device.</p> |
