| 摘要 |
PURPOSE:To prevent degradation in productivity and yield by providing check patterns for checking the deviation in rotation of printed reticle patterns. CONSTITUTION:A reticle mask 1 for a 1st photolithography stage has the check patterns 2, 3 to be exclusively used for checking the deviation in the rotation in the shot unit in the outside circumferential part of the reticle mask 1 when the patterns are printed on a wafer. The patterns 2, 3 are made into a vernier calipers type to allow quantitative reading of the deviation quantity so that said quantity can be read to order of 0.05mu. The rotational deviation is thereby easily discovered. The adverse influence on the post-stages and the degradation of the yield are prevented by executing lithography again when a defect arises. |
