| 发明名称 |
SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING THE SAME |
| 摘要 |
An SiO2 film (102) and a PSG film (122) are stacked on a semiconductor substrate (101). A contact hole (123A) is formed through the both films (102, 122). An Si3N4 film (124) is formed on a side wall of the contact hole (123A) as a free ion Na<+> blocking film. An aluminum wiring layer (126) is formed in the contact hole. This arrangement prevents free ions Na<+> from externally migrating through the SiO2 film (102) and reaching a nonvolatile semiconductor memory cell (121) during and after the formation of the contact hole. |
| 申请公布号 |
EP0281140(A3) |
申请公布日期 |
1989.08.02 |
| 申请号 |
EP19880103309 |
申请日期 |
1988.03.03 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
MORI, SEIICHI C/O PATENT DIVISION;SATO, MASAKI C/O PATENT DIVISION;YOSHIKAWA, KUNIYOSHI C/O PATENT DIVISION |
| 分类号 |
H01L21/768;H01L23/26;H01L23/29;H01L23/31;H01L23/532;(IPC1-7):H01L29/78;H01L21/28 |
主分类号 |
H01L21/768 |
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