| 摘要 |
A method of manufacturing a compound semiconductor single crystal, e.g. gallium arsenide wherein a container (11) containing a raw melt is placed in an atmosphere containing at least one monitor gas selected from hydrogen, oxygen, carbon monoxide, and carbon dioxide, a concentration of the monitor gas in the atmosphere is detected, and the detected concentration of the monitor gas is controlled to be a preset value. A compound semiconductor single crystal having a uniform carrier concentration can be obtained by controlling the concentration of the monitor gas.
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