| 摘要 |
<p>PURPOSE:To facilitate manufacture by decreasing the number of inter-layer insulation films and to improve the surface flatness by forming a gate electrode wiring and an accumulation capacitor electrode on one and the same plane and forming a wiring part by the two-layer structure of a gate electrode member and a transparent conductive film. CONSTITUTION:By forming a transparent conductive film on a transparent glass substrate 1 and patterning it, a gate electrode 2 and a capacitor electrode 3 are formed. Subsequently, Cr is formed to a film and by patterning it, a gate electrode 4 and a capacitor electrode 5 are overlapped and formed on the gate electrode wiring 2 and the capacitor electrode 3, respectively. The electrode 4 and 5 are connected by an upper layer wiring 7 at the time of forming a transistor thereafter. Next, a gate insulating film 11 for covering the wiring 4 and the electrode 5 is formed. On a gate insulating film 11 on the wiring 4, a-Si 8 is formed, an opening hole 6 is provided on the insulating film 11 on the capacitor electrode 5, and thereafter, the upper layer wiring is formed. This upper layer wiring becomes the wiring 7 for connecting the capacitor electrode in the line direction together with a source electrode 9 and a drain electrode 9' of the transistor. The electrode 5 is connected to a ground terminal of the substrate 1 by the wiring 7, and a display electrode 10 is provided.</p> |
