| 摘要 |
<p>PURPOSE:To produce a stable low-reflection mask material with good reproducibility by forming an oxide film of a transition metal silicide further on a substrate on which a transition metal silicide film is formed, under specific conditions by sputtering utilizing gaseous argon contg. gaseous oxygen. CONSTITUTION:The oxide film 3 of the transition metal silicide is further formed by the sputtering method utilizing the gaseous argon contg. the gaseous oxygen on the substrate 1 on which the transition metal silicide film 1 is formed to produce the low-reflection mask material. The ratio of the oxygen partial pressure in the gaseous argon to the total pressure is designated as gamma and the power of the sputtering as Qkw and the sputtering is so executed that the value gamma satisfies the inequality gamma<=9/25Q. The sputtering is thus executed under the conditions under which the ratio gamma of the oxygen partial pressure attains the value lower than the condition value at which the oxidation of a target arises. The oxidation of the target is thereby prohibited and the stable low- reflection mask material having the reproducibility at all times is obtd.</p> |
