| 摘要 |
<p>PURPOSE:To decrease disconnection defects of source wirings and to improve performance and the yield of production by forming source wirings of a lower layer simultaneously with the gate electrode wirings on a substrate, connecting both and constituting the device in such a manner that a part thereof serves as the two-layered source wiring. CONSTITUTION:A transparent conductive film is formed on the polished and cleaned transparent insulating substrate 1 and the patterns of desired display electrodes 7 are formed. A film of metals such as Ce, Ta and Al or alloys thereof is then formed. A dielectric film of SiN or SiO2 as a gate insulating film 3 and a film of a-Si or P-Si, etc., as a semiconductor film are then formed. The semiconductor film 4 of the upper layer is patterned and in succession, the gate insulating film 3 of the lower layer is patterned. Contact holes 9 are previously bored on a part of the source wirings 8 of the lower layer formed simultaneously with the gate electrode wirings 2 so that said wirings can be connected to the source electrode wirings 5 of the intrinsic upper layer to be formed afterward. The gate electrode wirings 5 and drain electrodes 6 of the upper layers are then formed, by which TFTs are completed.</p> |
