| 摘要 |
<p>PURPOSE:To obtain a circuit giving a stable hysteresis characteristic by connecting a bipolar IC circuit including a bipolar transistor(TR) and a hysteresis generating circuit having a CMOSTR switching a MIS TR. CONSTITUTION:With an input voltage V1 increased and with a base voltage VB of a TR Q reaching a sum 3VF of three forward voltage drops of diodes D1, D2 and a base-emitter diode of the TR Q or over, the TR Q is turned on. In this case, the output voltage V0 is decreased to an L level, the gate voltage of the inverter circuit 3 of a hysteresis control circuit 2a is decreased toward L level, and when the voltage is lower than the threshold value VTH of the circuit 3, the voltage at a point N2 goes to an H level. When the voltage is over the threshold value VTH0 of the TR M0, the TR M0 is turned on, the voltage at the point N1 is nearly zero and the voltage VB is decreased to nearly 2VF. When the voltage V1 transits from H to L, the voltage V0 is inverted to H at a point D when the voltage VB is lower than nearly 2VF.</p> |
