| 摘要 |
<p>PURPOSE:To prevent a crack to reach a semiconductor substrate even when the crack generates in a film when the element forming regions of the substrate are to be cut along dicing lines by a method wherein a passivation film to cover the upper parts of the element forming regions and the dicing lines, and moreover having slits on the boundaries thereof is adhered, and dicing is performed along the lines covered with the film. CONSTITUTION:Elements, wirings, etc., are formed in the chip regions 1 of an Si wafer, and the passivation film consisting of a PSG film is adhered on the whole surface containing them. Then the film on the boundaries between the chip regions 1 and the dicing lines 2 is selectively etched to be removed, and the slits 3 are formed. After then, dicing is performed using a blade to the wafer together with the passivation film adhered thereon along the lines 2 to divide into the individual chip. Accordingly, even when the crack is generated in the film covering the upper parts of the lins 2, the crack is not extended up to the upper part of the region 1 according to existence of the slit 3.</p> |
