发明名称 |
CEMENTETION CONTROL METHOD FOR SILICON PLATE |
摘要 |
The method for manufacturing directional electrical steel sheet is characterized by maintaining the decarburized annealing sheet, which comprises not more than 400 ppm. MgO and conventionally is covered with mgO as annealing separation agent, prior to high temperature annealing under the dried atmosphere of 100-180 deg.C. This process is used for controlling the generation of a cementation structure in the high temperature annealing.
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申请公布号 |
KR890002798(B1) |
申请公布日期 |
1989.07.31 |
申请号 |
KR19850010075 |
申请日期 |
1985.12.31 |
申请人 |
POHANG IRON & STEEL CO.,LTD. |
发明人 |
CHOI, KYU-SUNG;SHIN, JONG-CHOL |
分类号 |
C21D8/12;(IPC1-7):C21D8/12 |
主分类号 |
C21D8/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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