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发明名称
METHOD OF FORMING A SEMICONDUCTOR STRUCTURE HAVING DIELECTRICALLY ISOLATED MONOCRYSTALLINE SILICON REGIONS
摘要
申请公布号
EP0159655(B1)
申请公布日期
1989.07.26
申请号
EP19850104594
申请日期
1985.04.17
申请人
INTERNATIONAL BUSINESS MACHINES CORPORATION
发明人
KINNEY, WAYNE IRVING;LASKY, JEROME BRETT;NESBIT, LARRY ALAN
分类号
H01L21/76;H01L21/265;H01L21/306;H01L21/762
主分类号
H01L21/76
代理机构
代理人
主权项
地址
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