| 摘要 |
<p>A semiconductor device includes a semiconductor substrate (11, 31) having a trench (10, 40) and a transistor region (Tr, Tr1, Tr2) around the trench, the transistor region comprising source and drain regions (S, D) and a channel region above which a gate electrode (16, 16a, 16b, 26) is formed. An insulation film (20, 30) is formed so as to surround sidewalls of the trench. A conductive shield layer (13, 23, 23 min ) is formed along sidewalls of the first insulation film and is located under at least the gate electrode. A memory cell capacitor (C) having first and second electrodes and an insulation film (14b, 24b) is interposed between the first and second electrodes (12, 15, 22, 25) formed in the trench. The first electrode (12, 22) is electrically connected to the drain region.</p> |
