发明名称 |
Metallization for integrated devices |
摘要 |
Metallization of integrated devices using ruthenium as a metallization material results in well-adhering contacts to source and drain regions as well as to gate oxide. Ruthenium is similarly suited as a diffusion barrier metallization between, e.g., silicon and aluminum and as an interconnection metallization material. And, as a diffusion barrier material, ruthenium dioxide may be used.
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申请公布号 |
US4851895(A) |
申请公布日期 |
1989.07.25 |
申请号 |
US19870059210 |
申请日期 |
1987.06.03 |
申请人 |
AMERICAN TELEPHONE AND TELEGRAPH COMPANY, AT&T BELL LABORATORIES |
发明人 |
GREEN, MARTIN L.;GROSS, MICHAL E. |
分类号 |
H01L23/532 |
主分类号 |
H01L23/532 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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