| 摘要 |
PURPOSE:To make it possible to form an X-ray mask in which an X-ray absorber is formed by minute W (tungsten) and simplify an X-ray mask forming process, by selectively causing W to grow by a pressure reducing thermal CVD method. CONSTITUTION:In a method for forming a high melting point metal film pattern on an X-ray mask, when a high melting point metal film 17 is selectively caused to grow by a pressure reducing thermal CVD method using a metal halogen gas, it is selectively caused to grow on an X-ray transmittable thin film 12 directly without interposing a base thin film layer on which a silicon thin film and the like is to be selectively caused to grow. Since a W film deposited by the pressure reducing thermal CVD method is minute, X-ray absorption coefficient per unit is much larger than W obtained by conventional sputtering methods. As a result, it is possible to form an X-ray mask in which high melting point metal such as W is an X-ray absorber by a simple process. |
