| 摘要 |
<p>PURPOSE:To obtain a thin-film transistor matrix which has a high yield and low wiring resistance by forming scanning lines by laminating a transparent conductive film, a high melting point metal which can be etched by a liquid chemical which hardly etches the transparent conductive film and a metallic film which consists essentially of Al successively from a substrate side on the substrate. CONSTITUTION:The scanning lines 8 are made of the multilayhered wirings consisting of an ITO film (indium oxide + tin oxide) 81, a Cr film 82 and an Al film 83 successively from the insulating substrate 1 side and gate electrodes 2 are made of the multilayered structure consisting of an ITO film 21 which is the transparent conductive film and a Cr film 22. Connection of source electrodes 6 and picture element electrodes 7 is executed via a Cr film 71 used for protecting the ITO film which forms the picture element electrodes. Since the scanning lines are made of the 3-layered structure successively laminated with the transparent conductive film, the high melting point metal film and the Al film in such a manner, the disconnection of the scanning lines is prevented, the resistance is lowered and the yield is improved.</p> |
